The relationship between the absorption power (peak value) of transient voltage and the pulse width of transient voltage is only given in the manual as the absorption power (peak value) at a specific pulse width. However, the pulse width in the actual circuit is unpredictable and needs to be estimated in advance. Wide pulses should be downgraded for use.
1. Circuit design issues; 2. The frequency is too high; 3. Insufficient heat dissipation design; 4. Incorrect selection of MOS transistor
During normal operation, the substrate of a P-channel enhanced MOS transistor must be connected to the source, and the voltage Vds at the drain center should be negative to ensure that the PN junction between the two P regions and the substrate is reverse biased. At the same time, in order to form a conductive channel near the top surface of the substrate, the voltage Vgs between the gate and the source should also be negative.
In the field of electronic applications, it is essential to protect against electrostatic discharge, transient voltage, EFT, and surge voltage immunity to ensure the safety and reliability of electronic circuits. In the field of protection, there are two types of protective components.
It is a product that replaces voltage stabilizing electronic diodes and is made into a diffusion type or alloy type of silicon. It is a diode with a sudden change in reverse breakdown characteristic curve and is used as a control voltage and standard voltage
ESD4V5FBD323 SOD-323 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
